Lam Research has introduced ALTUS Halo, the first atomic layer deposition (ALD) tool designed to utilize molybdenum for semiconductor manufacturing. This new technology enables advanced chip scaling by providing low-resistivity, void-free metallization, making it a crucial solution for high-performance applications like AI, cloud computing, and next-generation smart devices.
ALTUS Halo marks a significant advancement in semiconductor metallization. Traditionally, tungsten has been used for deposition in chip manufacturing, but as NAND, DRAM, and logic devices evolve, the industry is transitioning toward molybdenum. Molybdenum offers lower resistivity than tungsten and eliminates the need for adhesion or barrier layers, improving efficiency and chip speed. Lam’s ALTUS Halo technology achieves this with a 50% improvement in resistance compared to conventional tungsten-based methods.
The tool is already being adopted by major semiconductor manufacturers, including high-volume 3D NAND producers in Korea and Singapore, as well as leading logic and DRAM fabs. Micron, one of the early adopters, has credited the ALTUS Halo tool with enabling its leadership in NAND technology by improving I/O bandwidth and storage capacity.
By integrating Lam’s quad station module architecture with advanced ALD innovations, ALTUS Halo enhances deposition precision and efficiency, supporting the industry's transition to more advanced semiconductor architectures such as 1,000-layer 3D NAND and 4F2 DRAM.
Lam Research continues to play a critical role in semiconductor innovation, offering advanced solutions that drive chip performance and scalability.
WS News